BCR198SH6827XTSA1
Infineon Technologies
Infineon Technologies
TRANS 2PNP PREBIAS 0.25W SOT363
$0.00
Available to order
Reference Price (USD)
18,000+
$0.05141
Exquisite packaging
Discount
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Discover the versatility of Infineon Technologies's BCR198SH6827XTSA1, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The BCR198SH6827XTSA1 is widely used in IoT devices, medical equipment, and renewable energy systems. Infineon Technologies's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the BCR198SH6827XTSA1 offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Last Time Buy
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 190MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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