BCX5216E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 60V 1A SOT89
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
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Upgrade your electronic designs with the BCX5216E6327HTSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the BCX5216E6327HTSA1 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Infineon Technologies for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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