PMST2369,135
NXP USA Inc.
NXP USA Inc.
PMST2369 - UPN SWITCHING TRANSIS
$0.02
Available to order
Reference Price (USD)
10,000+
$0.02720
Exquisite packaging
Discount
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The PMST2369,135 Bipolar Junction Transistor (BJT) from NXP USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the PMST2369,135 is a reliable component for demanding applications. NXP USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 400nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 500MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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