BDX33C
Harris Corporation
Harris Corporation
TRANS NPN DARL 100V 10A TO220AB
$0.54
Available to order
Reference Price (USD)
2,000+
$0.45276
Exquisite packaging
Discount
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Optimize your electronic systems with the BDX33C Bipolar Junction Transistor (BJT) from Harris Corporation. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BDX33C delivers superior performance in diverse environments. Harris Corporation's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Power - Max: 70 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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