BDX33DS
Harris Corporation
Harris Corporation
TRANS NPN DARL 120V 10A TO220
$1.19
Available to order
Reference Price (USD)
1+
$1.19000
500+
$1.1781
1000+
$1.1662
1500+
$1.1543
2000+
$1.1424
2500+
$1.1305
Exquisite packaging
Discount
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The BDX33DS from Harris Corporation is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the BDX33DS ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of BDX33DS and enhance your electronic projects with this top-quality component from Harris Corporation.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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