2SB1216T-TL-H
onsemi
onsemi
TRANS PNP 100V 4A TPFA
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the 2SB1216T-TL-H Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SB1216T-TL-H delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TP-FA
Related Products
NXP USA Inc.
PMXB65ENE,147
Microchip Technology
JANS2N2484UB
Microchip Technology
JAN2N6059
Microchip Technology
MNS2N3501
Microchip Technology
2N5326
Microchip Technology
2N4036L
Diodes Incorporated
DXTP07100BFGQ-7
onsemi
NSVBCH807-40LT1G
Harris Corporation
D64ES5
Microsemi Corporation