BF1100,215
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 14V 30MA SOT143
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the BF1100,215 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The BF1100,215's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s BF1100,215 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: -
- Voltage - Test: 9 V
- Current Rating (Amps): 30mA
- Noise Figure: 2dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 14 V
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
Related Products
Infineon Technologies
PTFA192001FV4FWSA1
NXP USA Inc.
PRF13750HR9
Ampleon USA Inc.
BLF7G20LS-140P,112
Infineon Technologies
PTFA181001FV4XWSA1
NXP USA Inc.
MRF6S18060NBR1
NXP USA Inc.
BF998,215
NXP USA Inc.
MRF8S19140HSR5
Infineon Technologies
PTFA091201HL V1
NXP USA Inc.
AFT26H200W03SR6
NXP USA Inc.