BF1208D,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH DUAL GATE SOD666
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As a leading solution in the Discrete Semiconductor Products market, the BF1208D,115 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The BF1208D,115's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the BF1208D,115 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 32dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 0.9dB
- Current - Test: 19 mA
- Power - Output: -
- Voltage - Rated: 6 V
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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