BF1212WR,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
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The BF1212WR,115 by NXP USA Inc. is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the BF1212WR,115 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, NXP USA Inc.'s BF1212WR,115 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 30dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 0.9dB
- Current - Test: 12 mA
- Power - Output: -
- Voltage - Rated: 6 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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