BFP405FH6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, L BAND, NPN
$0.14
Available to order
Reference Price (USD)
1+
$0.14000
500+
$0.1386
1000+
$0.1372
1500+
$0.1358
2000+
$0.1344
2500+
$0.133
Exquisite packaging
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The BFP405FH6327 RF Bipolar Junction Transistor (BJT) by Infineon Technologies is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust Infineon Technologies for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
- Gain: 22.5dB
- Power - Max: 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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