BFS483H6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS 2 NPN 12V 8GHZ SOT363-6
$0.83
Available to order
Reference Price (USD)
3,000+
$0.28306
6,000+
$0.26580
15,000+
$0.25717
30,000+
$0.24854
Exquisite packaging
Discount
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The BFS483H6327XTSA1 by Infineon Technologies is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Infineon Technologies for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
- Gain: 19dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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