BFU520YF
NXP USA Inc.
NXP USA Inc.
RF TRANS 2 NPN 12V 10GHZ SOT363
$0.56
Available to order
Reference Price (USD)
1+
$0.56458
500+
$0.5589342
1000+
$0.5532884
1500+
$0.5476426
2000+
$0.5419968
2500+
$0.536351
Exquisite packaging
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Discover the BFU520YF, a premium RF Bipolar Junction Transistor (BJT) by NXP USA Inc., part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The BFU520YF boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose NXP USA Inc. for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
- Gain: 14dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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NXP USA Inc.