BLC9G20LS-120VZ
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT12753
$61.10
Available to order
Reference Price (USD)
1+
$66.15000
20+
$62.13800
100+
$55.72370
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLC9G20LS-120VZ from Ampleon USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the BLC9G20LS-120VZ is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Ampleon USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Last Time Buy
- Transistor Type: LDMOS
- Frequency: 1.81GHz ~ 1.88GHz
- Gain: 19.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 700 mA
- Power - Output: 120W
- Voltage - Rated: 65 V
- Package / Case: SOT-1275-3
- Supplier Device Package: SOT-1275-3
Related Products
Ampleon USA Inc.
BLA9H0912L-1200PU
Ampleon USA Inc.
BLC8G27LS-140AVZ
Microwave Technology Inc.
MWT-PH4F
NXP USA Inc.
A2G35S200-01SR3
Ampleon USA Inc.
BLP05H6700XRGY
Wolfspeed, Inc.
GTVA261802FC-V1-R0
Wolfspeed, Inc.
CGHV14500F
NXP USA Inc.
MMRF2010GNR1
NXP USA Inc.
MMRF1312GSR5
Ampleon USA Inc.