BLF3G21-30
Ampleon USA Inc.
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
$86.32
Available to order
Reference Price (USD)
1+
$86.32000
500+
$85.4568
1000+
$84.5936
1500+
$83.7304
2000+
$82.8672
2500+
$82.004
Exquisite packaging
Discount
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Enhance your circuit designs with the BLF3G21-30 Bipolar Junction Transistor (BJT) from Ampleon USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BLF3G21-30 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Ampleon USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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