BLF6G10LS-135R,112
NXP USA Inc.
NXP USA Inc.
RF TRANSISTOR
$87.91
Available to order
Reference Price (USD)
1+
$87.91000
500+
$87.0309
1000+
$86.1518
1500+
$85.2727
2000+
$84.3936
2500+
$83.5145
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the BLF6G10LS-135R,112 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The BLF6G10LS-135R,112's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the BLF6G10LS-135R,112 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 871.5MHz ~ 891.5MHz
- Gain: 21dB
- Voltage - Test: 28 V
- Current Rating (Amps): 32A
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 26.5W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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