BLF6G10LS-160RN112
NXP USA Inc.
NXP USA Inc.
RF POWER TRANSISTORS
$81.82
Available to order
Reference Price (USD)
1+
$81.82000
500+
$81.0018
1000+
$80.1836
1500+
$79.3654
2000+
$78.5472
2500+
$77.729
Exquisite packaging
Discount
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The BLF6G10LS-160RN112 by NXP USA Inc. is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust NXP USA Inc. for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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