BLF6G10LS-200,118
NXP USA Inc.
NXP USA Inc.
FET RF 65V 871.5MHZ SOT502B
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLF6G10LS-200,118 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the BLF6G10LS-200,118 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 871.5MHz
- Gain: 20.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 49A
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 40W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
Related Products
onsemi
3HP04CH-TL-E
Freescale Semiconductor
MRF6VP3450HR6
NXP USA Inc.
MRF19125R3
NXP USA Inc.
AFT23H201-24SR6
Wolfspeed, Inc.
PXAC182908FV-V1-R250
Wolfspeed, Inc.
PTFB092707FH-V1-R250
NXP USA Inc.
MMRF1006HSR5
MACOM Technology Solutions
MAGX-000035-01000P
Freescale Semiconductor
MRF6VP121KHR5178
Wolfspeed, Inc.