BLF6G10LS-200RN
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V SOT539
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the BLF6G10LS-200RN, a state-of-the-art RF MOSFET transistor from Ampleon USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The BLF6G10LS-200RN combines cutting-edge semiconductor technology with Ampleon USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the BLF6G10LS-200RN into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Last Time Buy
- Transistor Type: LDMOS
- Frequency: 700MHz ~ 1GHz
- Gain: 20dB
- Voltage - Test: 28 V
- Current Rating (Amps): 4.2µA
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 200W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
Related Products
NXP USA Inc.
MRF9210R5
NXP USA Inc.
MRFX1K80NR5578
Freescale Semiconductor
MRFE6S9160HR3
onsemi
NMP405-S-AZ
NXP USA Inc.
MRF6S21050LSR3
onsemi
2SK304E-SPA-AC
Freescale Semiconductor
MRF6V2300NR5
NXP USA Inc.
MHT2025GNR1
NXP USA Inc.
MRF21010LSR1
Wolfspeed, Inc.