BLL8H0514L-130112
Ampleon USA Inc.
Ampleon USA Inc.
LDMOS RF POWER TRANSISTOR
$145.13
Available to order
Reference Price (USD)
1+
$145.13000
500+
$143.6787
1000+
$142.2274
1500+
$140.7761
2000+
$139.3248
2500+
$137.8735
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BLL8H0514L-130112 Bipolar Junction Transistor (BJT) from Ampleon USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BLL8H0514L-130112 delivers superior performance in diverse environments. Ampleon USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Central Semiconductor Corp
CZT5401 BK PBFREE
Microchip Technology
JAN2N2905
Microchip Technology
JAN2N4237
Microchip Technology
2N3904UB
Diodes Incorporated
ZTX653QSTZ
Harris Corporation
2N5490
Renesas Electronics America Inc
UPA1456H(1)-AZ
Renesas Electronics America Inc
2SC4570-T1-A
Microchip Technology
JANSL2N3635UB
Harris Corporation