BLP8G10S-45PGJ
NXP USA Inc.
NXP USA Inc.
TRANS LDMOS 45W 4HSOP
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As a leading solution in the Discrete Semiconductor Products market, the BLP8G10S-45PGJ RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The BLP8G10S-45PGJ's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the BLP8G10S-45PGJ provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 700MHz ~ 1GHz
- Gain: 21dB
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 45W
- Voltage - Rated: 28 V
- Package / Case: SOT-1223-1
- Supplier Device Package: 4-HSOPF
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