BS107P
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 200V 120MA TO92-3
$0.69
Available to order
Reference Price (USD)
1+
$0.73000
10+
$0.64500
100+
$0.50430
500+
$0.38184
1,000+
$0.31184
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BS107P from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BS107P offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
- Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Nexperia USA Inc.
PSMN7R6-60BS,118
Micro Commercial Co
MCU80N06A-TP
Infineon Technologies
IRF100S201
onsemi
FQP24N08
onsemi
FGD3050G2
Nexperia USA Inc.
BUK964R7-80E,118
STMicroelectronics
STH270N4F3-2
Toshiba Semiconductor and Storage
TK35N65W,S1F
onsemi
NTD4856N-35G
onsemi