NTD4856N-35G
onsemi
onsemi
MOSFET N-CH 25V 13.3A/89A IPAK
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the NTD4856N-35G single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTD4856N-35G combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
onsemi
NVF2955T1G
onsemi
NVTFS5C466NLWFTAG
EPC
EPC2045
Infineon Technologies
SPB11N60C2
Nexperia USA Inc.
BUK9637-100E,118
Vishay Siliconix
SI4408DY-T1-E3
Infineon Technologies
IPA50R280CEXKSA2
Vishay Siliconix
SI4463CDY-T1-GE3
Toshiba Semiconductor and Storage
SSM3K337R,LF
Texas Instruments