BSC0804LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 40A TDSON-8-6
$2.17
Available to order
Reference Price (USD)
1+
$2.17000
500+
$2.1483
1000+
$2.1266
1500+
$2.1049
2000+
$2.0832
2500+
$2.0615
Exquisite packaging
Discount
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Optimize your power electronics with the BSC0804LSATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BSC0804LSATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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