SQ4425EY-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CHANNEL 30V 18A 8SOIC
$2.02
Available to order
Reference Price (USD)
2,500+
$0.89870
5,000+
$0.86751
12,500+
$0.85050
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQ4425EY-T1_GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SQ4425EY-T1_GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 6.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Rohm Semiconductor
RF4E080BNTR
Infineon Technologies
IPB017N08N5ATMA1
Fairchild Semiconductor
FDU7030BL
onsemi
NTMTS0D7N04CLTXG
onsemi
NVMFS6H858NLWFT1G
IXYS
IXTT140N10P
Renesas Electronics America Inc
2SK1580-T1-A
Microchip Technology
APT20M45SVFRG
onsemi
NVMFS5C450NAFT1G
STMicroelectronics