BSC080N12LSGATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TDSON-8
$3.22
Available to order
Reference Price (USD)
1+
$3.22000
500+
$3.1878
1000+
$3.1556
1500+
$3.1234
2000+
$3.0912
2500+
$3.059
Exquisite packaging
Discount
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Enhance your electronic projects with the BSC080N12LSGATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSC080N12LSGATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 112µA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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