DMT47M2SFVWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V PWRDI3333
$0.39
Available to order
Reference Price (USD)
1+
$0.39008
500+
$0.3861792
1000+
$0.3822784
1500+
$0.3783776
2000+
$0.3744768
2500+
$0.370576
Exquisite packaging
Discount
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The DMT47M2SFVWQ-13 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMT47M2SFVWQ-13 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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