BSC123N10LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 10.6/71A 8TDSON
$2.31
Available to order
Reference Price (USD)
5,000+
$0.80438
10,000+
$0.78750
Exquisite packaging
Discount
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Optimize your power electronics with the BSC123N10LSGATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BSC123N10LSGATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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