BSH203,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 470MA TO236AB
$0.52
Available to order
Reference Price (USD)
3,000+
$0.10890
6,000+
$0.10230
15,000+
$0.09570
30,000+
$0.08778
75,000+
$0.08448
Exquisite packaging
Discount
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Upgrade your designs with the BSH203,215 by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSH203,215 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 4.5V
- Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 417mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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