BSH205G2VL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 2.3A TO236AB
$0.10
Available to order
Reference Price (USD)
10,000+
$0.07480
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the BSH205G2VL by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSH205G2VL is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 418 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
BSC032NE2LSATMA1
IXYS
IXFA26N30X3
Diodes Incorporated
DMN2320UFB4-7B
Diodes Incorporated
DMN24H3D5L-13
onsemi
NTB5D0N15MC
Fairchild Semiconductor
FQPF13N10
Infineon Technologies
IPB80P03P4L04ATMA1
onsemi
FDBL9406-F085
Toshiba Semiconductor and Storage
TK40S06N1L,LQ
Microchip Technology