BSM10GD120DN2E3224BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 15A 80W
$79.30
Available to order
Reference Price (USD)
10+
$54.20000
Exquisite packaging
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The BSM10GD120DN2E3224BOSA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the BSM10GD120DN2E3224BOSA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 15 A
- Power - Max: 80 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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