NXH450B100H4Q2F2PG
onsemi
onsemi
1000V,75A FSIII IGBT, MID SPEED
$156.67
Available to order
Reference Price (USD)
1+
$156.67000
500+
$155.1033
1000+
$153.5366
1500+
$151.9699
2000+
$150.4032
2500+
$148.8365
Exquisite packaging
Discount
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Experience next-generation power control with onsemi's NXH450B100H4Q2F2PG IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The NXH450B100H4Q2F2PG offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the NXH450B100H4Q2F2PG in your next-generation HVDC systems or particle accelerator power supplies. onsemi delivers reliability where it matters most with the NXH450B100H4Q2F2PG IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 101 A
- Power - Max: 234 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
- Current - Collector Cutoff (Max): 600 µA
- Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 56-PIM (93x47)
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