BSM300GB60DLCHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 600V 375A 1250W
$0.00
Available to order
Reference Price (USD)
10+
$154.81200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's BSM300GB60DLCHOSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the BSM300GB60DLCHOSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the BSM300GB60DLCHOSA1 power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 375 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
IXYS
VIO130-06P1
Microsemi Corporation
APTGT50SK170D1G
IXYS
IXEN60N120
Powerex Inc.
CM50MXA-24S
Infineon Technologies
MA13034801NDSA1
Microsemi Corporation
APTGF300DA120D3G
Infineon Technologies
BSM50GB170DN2HOSA1
IXYS
MKI50-06A7T
IXYS
MWI75-12E8
Microsemi Corporation