BSM50GD120DN2BOSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO
$0.00
Available to order
Reference Price (USD)
10+
$128.00000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSM50GD120DN2BOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the BSM50GD120DN2BOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every BSM50GD120DN2BOSA1 module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
IXYS
MUBW6-06A6
onsemi
F59314548D
Microsemi Corporation
APTGF15H120T3G
Littelfuse Inc.
MG1750S-BN4MM
Infineon Technologies
FS30R06XL4BOMA1
Vishay General Semiconductor - Diodes Division
VS-GA200TH60S
IXYS
VII50-06P1
Microchip Technology
APTGF50DSK120T3G
Powerex Inc.
CM400DU-12H
Powerex Inc.