BSM50GD120DN2G
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 78A 400W
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with Infineon Technologies's BSM50GD120DN2G, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The BSM50GD120DN2G is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every BSM50GD120DN2G module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 78 A
- Power - Max: 400 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microsemi Corporation
APTGF180DU60TG
Powerex Inc.
CM600HB-24A
Powerex Inc.
CM100TU-12H
Powerex Inc.
CM150RX-12A
Vishay General Semiconductor - Diodes Division
VS-VSHPS1445
Powerex Inc.
CM75TU-24H
Infineon Technologies
IRG7T400SD12B
Infineon Technologies
BSM20GP60BOSA1
Vishay General Semiconductor - Diodes Division
VS-GB150TS60NPBF
Vishay General Semiconductor - Diodes Division