VS-150MT060WDF-P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 138A 12MTP PRESS
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Optimize your power systems with Vishay General Semiconductor - Diodes Division's VS-150MT060WDF-P, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The VS-150MT060WDF-P is particularly effective in high-ambient-temperature environments like steel mill drives. Vishay General Semiconductor - Diodes Division brings decades of semiconductor expertise to every VS-150MT060WDF-P module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Dual Buck Chopper
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 138 A
- Power - Max: 543 W
- Vce(on) (Max) @ Vge, Ic: 2.48V @ 15V, 80A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 14 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: 12-MTP Pressfit
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