BSM50GP120BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 50A
$293.96
Available to order
Reference Price (USD)
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$172.84000
Exquisite packaging
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The BSM50GP120BOSA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the BSM50GP120BOSA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: 3 Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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