IRG5U100HF12B
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 180A POWIR 62
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The IRG5U100HF12B from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the IRG5U100HF12B in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the IRG5U100HF12B represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 180 A
- Power - Max: 780 W
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
- Current - Collector Cutoff (Max): 2 mA
- Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR® 62 Module
- Supplier Device Package: POWIR® 62
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