BSM75GP60BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 600V 100A 310W
$0.00
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Reference Price (USD)
10+
$144.23600
Exquisite packaging
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Experience next-generation power control with Infineon Technologies's BSM75GP60BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The BSM75GP60BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the BSM75GP60BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the BSM75GP60BOSA1 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 310 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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