BSP716NH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 2.3A SOT223-4
$0.68
Available to order
Reference Price (USD)
1,000+
$0.20205
2,000+
$0.18593
5,000+
$0.17519
10,000+
$0.16445
25,000+
$0.16266
Exquisite packaging
Discount
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Discover the BSP716NH6327XTSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the BSP716NH6327XTSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 218µA
- Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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