BSR316PL6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 100V 360MA SC59
$0.00
Available to order
Reference Price (USD)
3,000+
$0.14240
6,000+
$0.13377
15,000+
$0.12513
30,000+
$0.11478
75,000+
$0.11046
150,000+
$0.10615
Exquisite packaging
Discount
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The BSR316PL6327HTSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSR316PL6327HTSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 360mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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