BSS123IXTSA1
Infineon Technologies
Infineon Technologies
SMALL SIGNAL MOSFETS PG-SOT23-3
$0.42
Available to order
Reference Price (USD)
1+
$0.42000
500+
$0.4158
1000+
$0.4116
1500+
$0.4074
2000+
$0.4032
2500+
$0.399
Exquisite packaging
Discount
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Meet the BSS123IXTSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSS123IXTSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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