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BSS209PW L6327

Infineon Technologies
BSS209PW L6327 Preview
Infineon Technologies
MOSFET P-CH 20V 580MA SOT323-3
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT323
  • Package / Case: SC-70, SOT-323

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