BSS223PWH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 20V 390MA SOT323-3
$0.43
Available to order
Reference Price (USD)
3,000+
$0.07480
6,000+
$0.06573
15,000+
$0.05665
30,000+
$0.05363
75,000+
$0.05060
150,000+
$0.04455
Exquisite packaging
Discount
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Meet the BSS223PWH6327XTSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSS223PWH6327XTSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
- Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323
- Package / Case: SC-70, SOT-323
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