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BSS225H6327XTSA1

Infineon Technologies
BSS225H6327XTSA1 Preview
Infineon Technologies
MOSFET N-CH 600V 90MA SOT89
$0.00
Available to order
Reference Price (USD)
1,000+
$0.17952
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT89
  • Package / Case: TO-243AA

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