BSS84XHZGG2CR
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 60V 230MA DFN1010-3W
$0.61
Available to order
Reference Price (USD)
1+
$0.61000
500+
$0.6039
1000+
$0.5978
1500+
$0.5917
2000+
$0.5856
2500+
$0.5795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSS84XHZGG2CR single MOSFET from Rohm Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the BSS84XHZGG2CR is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010-3W
- Package / Case: 3-XFDFN
Related Products
onsemi
NTD4910N-35G
Infineon Technologies
IAUC120N04S6N009ATMA1
onsemi
FCP600N60Z
IXYS
IXFP26N50P3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ40G10A-F1-1100HF
Panjit International Inc.
PJW2P10A_R2_00001
onsemi
FCD4N60TM
IXYS
IXTX1R4N450HV
onsemi
FDC606P
Nexperia USA Inc.