IXTX1R4N450HV
IXYS
IXYS
MOSFET N-CH 4500V 1.4A TO247PLUS
$72.48
Available to order
Reference Price (USD)
1+
$53.10000
30+
$45.92000
120+
$43.05000
Exquisite packaging
Discount
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The IXTX1R4N450HV from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTX1R4N450HV offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4500 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247PLUS-HV
- Package / Case: TO-247-3 Variant
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