BSZ010NE2LS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 32A/40A TSDSON
$2.79
Available to order
Reference Price (USD)
1+
$2.79000
500+
$2.7621
1000+
$2.7342
1500+
$2.7063
2000+
$2.6784
2500+
$2.6505
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the BSZ010NE2LS5ATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSZ010NE2LS5ATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
Related Products
Panjit International Inc.
PJQ5444-AU_R2_000A1
Fairchild Semiconductor
IRFS730B
Infineon Technologies
IST006N04NM6AUMA1
Vishay Siliconix
SI2304BDS-T1-GE3
Infineon Technologies
IPD80R600P7ATMA1
Renesas Electronics America Inc
NP82N04NDG-S18-AY
Renesas Electronics America Inc
RJK0328DPB-00#J0
Vishay Siliconix
SI3460BDV-T1-E3
onsemi
FQP11N40C
onsemi