BSZ018NE2LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 23A/40A TSDSON
$2.06
Available to order
Reference Price (USD)
5,000+
$0.71500
10,000+
$0.70000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSZ018NE2LSATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the BSZ018NE2LSATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
Related Products
Torex Semiconductor Ltd
XP261N7002TR-G
Diodes Incorporated
ZXMN2A02N8TA
Infineon Technologies
SPI07N65C3XKSA1
onsemi
FDB3672-F085
Infineon Technologies
SPP03N60S5
Diodes Incorporated
DMG2301L-7
Infineon Technologies
IRFH7914TRPBF
Panjit International Inc.
PJL9409_R2_00001
Toshiba Semiconductor and Storage
TPH1110FNH,L1Q
IXYS