BSZ042N04NSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 40A TSDSON-8
$0.00
Available to order
Reference Price (USD)
5,000+
$0.51322
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSZ042N04NSGATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the BSZ042N04NSGATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IRL3715PBF
Infineon Technologies
BSO130N03MSGXUMA1
Vishay Siliconix
IRFRC20TRL
Infineon Technologies
IPP60R450E6
Vishay Siliconix
SQ3426EEV-T1-GE3
Infineon Technologies
BSS209PW L6327
Infineon Technologies
IRF7805PBF
Infineon Technologies
IRFZ44NL
onsemi
NTA4153NT3G
onsemi