BSZ100N06LS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 11A/20A 8TSDSON
$1.32
Available to order
Reference Price (USD)
5,000+
$0.40247
10,000+
$0.38734
25,000+
$0.38514
Exquisite packaging
Discount
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Upgrade your designs with the BSZ100N06LS3GATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSZ100N06LS3GATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerVDFN
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